DocumentCode :
2788335
Title :
Single event transient mitigation in cache memory using transient error checking circuits
Author :
Yao, Xiaoyin ; Clark, Lawrence T. ; Patterson, Dan W. ; Holbert, Keith E.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2010
fDate :
19-22 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
Protecting a high performance radiation hardened by design (RHBD) cache from single-event transient (SET) induced peripheral circuit errors is presented. Cache memory holds processor architectural state and peripheral errors can cause incorrect operations that affect entire data words, including parity. Thus, a periphery circuit, e.g., word-line, error can be induced that results in silent data corruption, for instance by writing two locations at once. The design presented here includes checking circuits to detect potential SET induced errors, allowing mitigation by invalidation of the write-through cache blocks. A 16 kB cache and test engine, fabricated on an IBM 90 nm bulk CMOS process, irradiated with heavy ions, is used to provide experimental validation of the design.
Keywords :
CMOS memory circuits; cache storage; radiation hardening (electronics); CMOS process; cache memory; peripheral circuit errors; processor architectural state; radiation hardened by design; silent data corruption; single event transient mitigation; size 90 nm; transient error checking circuits; Arrays; Microprocessors; Radiation hardening; Random access memory; Single event upset; Timing; Transient analysis; CMOS memory integrated circuits; Radiation hardening; heavy ion beams; high-speed integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4244-5758-8
Type :
conf
DOI :
10.1109/CICC.2010.5617439
Filename :
5617439
Link To Document :
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