• DocumentCode
    2788335
  • Title

    Single event transient mitigation in cache memory using transient error checking circuits

  • Author

    Yao, Xiaoyin ; Clark, Lawrence T. ; Patterson, Dan W. ; Holbert, Keith E.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2010
  • fDate
    19-22 Sept. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Protecting a high performance radiation hardened by design (RHBD) cache from single-event transient (SET) induced peripheral circuit errors is presented. Cache memory holds processor architectural state and peripheral errors can cause incorrect operations that affect entire data words, including parity. Thus, a periphery circuit, e.g., word-line, error can be induced that results in silent data corruption, for instance by writing two locations at once. The design presented here includes checking circuits to detect potential SET induced errors, allowing mitigation by invalidation of the write-through cache blocks. A 16 kB cache and test engine, fabricated on an IBM 90 nm bulk CMOS process, irradiated with heavy ions, is used to provide experimental validation of the design.
  • Keywords
    CMOS memory circuits; cache storage; radiation hardening (electronics); CMOS process; cache memory; peripheral circuit errors; processor architectural state; radiation hardened by design; silent data corruption; single event transient mitigation; size 90 nm; transient error checking circuits; Arrays; Microprocessors; Radiation hardening; Random access memory; Single event upset; Timing; Transient analysis; CMOS memory integrated circuits; Radiation hardening; heavy ion beams; high-speed integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2010 IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    0886-5930
  • Print_ISBN
    978-1-4244-5758-8
  • Type

    conf

  • DOI
    10.1109/CICC.2010.5617439
  • Filename
    5617439