DocumentCode
278836
Title
Effects of harmonic terminations on power and efficiency of GaAs HBT power amplifiers at 900 MHz
Author
Collinson, Glenn ; Suckling, Charles W.
Author_Institution
Texas Instrum. Ltd., Bedford, UK
fYear
1991
fDate
33588
Firstpage
42705
Lastpage
42709
Abstract
Investigates and discusses the effects of harmonic termination impedances on the collector efficiency of GaAs HBTs for use in power amplifiers at 900 MHz. Collector efficiency is shown, by experiment, to vary by 38% points as harmonic terminations at both input and output are varied. An optimum collector efficiency (870 MHz) of 78% with an associated power gain of 12 dB is reported for a 100 μm emitter length HBT at an RF output power density of 1.6 W/(mm emitter length) when 2nd and 3rd harmonics are terminated in short and open circuits respectively at both input and output
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; 100 micron; 12 dB; 2nd harmonic; 3rd harmonic; 78 percent; 900 MHz; GaAs; HBT power amplifiers; RF output power density; collector efficiency; emitter length; harmonic termination impedances; harmonic terminations effect; power; power amplifiers; power gain; semiconductors;
fLanguage
English
Publisher
iet
Conference_Titel
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
182350
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