Title :
Effects of harmonic terminations on power and efficiency of GaAs HBT power amplifiers at 900 MHz
Author :
Collinson, Glenn ; Suckling, Charles W.
Author_Institution :
Texas Instrum. Ltd., Bedford, UK
Abstract :
Investigates and discusses the effects of harmonic termination impedances on the collector efficiency of GaAs HBTs for use in power amplifiers at 900 MHz. Collector efficiency is shown, by experiment, to vary by 38% points as harmonic terminations at both input and output are varied. An optimum collector efficiency (870 MHz) of 78% with an associated power gain of 12 dB is reported for a 100 μm emitter length HBT at an RF output power density of 1.6 W/(mm emitter length) when 2nd and 3rd harmonics are terminated in short and open circuits respectively at both input and output
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; 100 micron; 12 dB; 2nd harmonic; 3rd harmonic; 78 percent; 900 MHz; GaAs; HBT power amplifiers; RF output power density; collector efficiency; emitter length; harmonic termination impedances; harmonic terminations effect; power; power amplifiers; power gain; semiconductors;
Conference_Titel :
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location :
London
