Title :
The design of a 2 watt I-band MCM amplifier module using theoretically predicted GaAs FET optimum load contours
Author_Institution :
Ferranti Int. plc, Stockport, UK
Abstract :
A simple technique is demonstrated which aids the design of SSPA modules by the generation of theoretical load-pull contours. The design of a 2 Watt I-band amplifier module is used as a vehicle to illustrate this procedure. The amplifier is designed to meet MCM (Microwave Common Module) criteria and a discussion of the advantages of adopting the MCM modular approach to SSPA design is included
Keywords :
III-V semiconductors; circuit CAD; gallium arsenide; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; 2 W; 2 Watt I-band amplifier module; GaAs; GaAs FET optimum load contours; MCM amplifier module; SSPA design; SSPA modules; semiconductors; solid state power amplifiers; theoretical load-pull contours;
Conference_Titel :
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location :
London
