Title :
Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure
Author :
Jin, C.Y. ; Liu, H.Y. ; Zhang, S.Y. ; Airey, R. ; Hopkinson, M.
Author_Institution :
Department of Electronic & Electrical Engineering, University of Sheffield, S1 3JD, UK
Abstract :
A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.
Keywords :
Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical fiber communication; Optical materials; Power generation; Quantum well lasers; Radiative recombination; Threshold current;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431396
