• DocumentCode
    2788552
  • Title

    W-band pulsed radar receiver in low cost CMOS

  • Author

    Zhang, Ning ; Kenneth, K.O.

  • Author_Institution
    Dept. of Elec. & Comp. Eng., Univ. of Florida, Gainesville, FL, USA
  • fYear
    2010
  • fDate
    19-22 Sept. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A CMOS heterodyne receiver integrating a phase-locked loop that includes a bulk of transmitter functions for W-band pulsed radar is realized using low leakage transistors of a low cost 65-nm bulk CMOS process with 5 thin and 1 thick metal layers used to manufacture cell phone RFIC´s. The peak conversion gain of receiver is 7 dB and the minimum NF is 10.8 dB between 78 and 88 GHz in measurement. The entire receiver front-end consumes ~190 mW.
  • Keywords
    CMOS analogue integrated circuits; phase locked loops; radar receivers; CMOS heterodyne receiver; W-band pulsed radar receiver; gain 7 dB; low cost CMOS; low leakage transistor; peak conversion gain; phase-locked loop; size 65 nm; transmitter function; CMOS integrated circuits; Gain; Metals; Mixers; Noise measurement; Radar; Receivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2010 IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    0886-5930
  • Print_ISBN
    978-1-4244-5758-8
  • Type

    conf

  • DOI
    10.1109/CICC.2010.5617452
  • Filename
    5617452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788552