Lithographic manufacturing techniques for wafer scale integration

Author

Flack, W.W. ; Flores, Gary E.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1992

fDate

22-24 Jan 1992

Firstpage

4

Lastpage

13

Abstract

A methodology utilizing a mix-and-match approach of optical 1×lithography and e-beam lithography currently used at TRW for WSI (wafer scale integration) technologies is discussed. Field stitching techniques, design considerations, and macrocell grouping techniques which enhance field stitching capability and impact design rules are described for this mix and match e-beam and 1×optical stepper lithography process. A comparative cost analysis of WSI tooling costs, WSI wafer throughput, and WSI tooling requirements is presented to illustrate the tradeoffs among the various lithography systems. The proposed lithography process has been experimentally verified using test chip field stitching structures

Keywords

VLSI; electron beam lithography; photolithography; 1*optical stepper; TRW; WSI; cost analysis; design considerations; design rules; e-beam lithography; field stitching; macrocell grouping techniques; mix-and-match approach; test chip field stitching structures; tooling costs; tooling requirements; tradeoffs; wafer scale integration; wafer throughput; Biomedical optical imaging; Detectors; High speed optical techniques; Integrated circuit technology; Lithography; Manufacturing; Optical signal processing; Solid state circuits; Very large scale integration; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Scale Integration, 1992. Proceedings., [4th] International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

0-8186-2482-5

Type

conf

DOI

10.1109/ICWSI.1992.171790

Filename

171790