DocumentCode :
2788574
Title :
Development of mm-wave solid state devices in China (invited)
Author :
Jianting Lin
Author_Institution :
Nanjing Electronic Devices Institute
fYear :
1989
fDate :
0-0 1989
Firstpage :
5
Lastpage :
6
Abstract :
The delevelopment of MM-wave solid state devices in China has a history of nearly 30 years. Now many devices have formed a series of products, including mixer diode, detector diode, Gunn diode, varactor diode, IMPATT diode, PIN diode and solid state niose diode etc., with the frequency covering 18 - 110GHz. Units consisting of mm-wave devices, such as mixer, detector, switch, attenuator, multiplier and noise source, have been widely used for various mm-wave systems. Varieties of novel mm-wave devices-GaAS MESFET, HEMT, HBT, BCT and superconducting devices as well as mm-wave MMIC are also being researched actively.
Keywords :
Attenuators; Detectors; Frequency; Gunn devices; Power generation; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Solid state circuits; Superconducting device noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
Type :
conf
DOI :
10.1109/ICMWFT.1989.763738
Filename :
763738
Link To Document :
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