DocumentCode
2788574
Title
Development of mm-wave solid state devices in China (invited)
Author
Jianting Lin
Author_Institution
Nanjing Electronic Devices Institute
fYear
1989
fDate
0-0 1989
Firstpage
5
Lastpage
6
Abstract
The delevelopment of MM-wave solid state devices in China has a history of nearly 30 years. Now many devices have formed a series of products, including mixer diode, detector diode, Gunn diode, varactor diode, IMPATT diode, PIN diode and solid state niose diode etc., with the frequency covering 18 - 110GHz. Units consisting of mm-wave devices, such as mixer, detector, switch, attenuator, multiplier and noise source, have been widely used for various mm-wave systems. Varieties of novel mm-wave devices-GaAS MESFET, HEMT, HBT, BCT and superconducting devices as well as mm-wave MMIC are also being researched actively.
Keywords
Attenuators; Detectors; Frequency; Gunn devices; Power generation; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Solid state circuits; Superconducting device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-87942-717-5
Type
conf
DOI
10.1109/ICMWFT.1989.763738
Filename
763738
Link To Document