• DocumentCode
    2788643
  • Title

    The effects of ionizing radiation on the data retention of static random access memories

  • Author

    Benedetto, J.M. ; Jordan, A. ; LaValley, N.

  • Author_Institution
    Aeroflex UTMC, Colorado Springs, CO, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    16
  • Lastpage
    20
  • Abstract
    The sensitivity of 4-transistor/2-resistor SRAMs to loss of stored data at nominal voltage levels is shown to increase following exposure to ionizing radiation. Pre-irradiation screening techniques and adjusted/modified device specifications can eliminate data retention failures during mission use
  • Keywords
    SRAM chips; failure analysis; low-power electronics; radiation effects; space vehicle electronics; data retention failure; ionizing radiation; low-voltage space electronics; screening technique; static random access memory; DRAM chips; Ionizing radiation; Leakage current; Manufacturing; Random access memory; SRAM chips; Springs; Temperature dependence; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2000
  • Conference_Location
    Reno, NV
  • Print_ISBN
    0-7803-6474-0
  • Type

    conf

  • DOI
    10.1109/REDW.2000.896263
  • Filename
    896263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788643