DocumentCode :
2788647
Title :
Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode
Author :
Boucherif, Abderraouf ; Ban, Dayan ; Luo, Hui ; Dupont, Emmanuel ; Liu, H.C. ; Wasilewski, Z.R. ; Paltiel, Yossi
Author_Institution :
Department of Electrical and Computer Engineering, University of Waterloo 200 University Avenue West, N2L 3G1, Canada
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 ¿m was demonstrated at temperatures up to 200 K.
Keywords :
Cameras; Gallium arsenide; Infrared detectors; Integrated optics; Light emitting diodes; Optical imaging; Photodetectors; Photodiodes; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431411
Filename :
4431411
Link To Document :
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