Title :
SEU evaluation of SRAM memories for space applications
Author :
Scheick, L.Z. ; Swift, G.M. ; Guertin, S.M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
SEU cross-sections were obtained for three different SRAM memories. The 1 Mbit White Electronics WMS128k8, the 256 kbit Austin MT5C2564 and the 256 kbit Austin MT5C2568 SRAMs were tested. The SEU thresholds, respectively were 1 MeV cm2/mg, 1.4 MeV cm2 /mg, and 1.8 MeV cm2/mg. SEL thresholds were also obtained. These were 37 MeV cm2/mg, 37 MeV cm2/mg and 59 MeV cm2/mg, respectively
Keywords :
SRAM chips; ion beam effects; space vehicle electronics; 1 Mbit; 256 kbit; Austin MT5C2564; Austin MT5C2568; SEU cross-section; SRAM memory; White Electronics WMS128k8; heavy ion irradiation; space electronics; Aerospace electronics; CMOS technology; Circuit testing; Electronic equipment testing; Laboratories; Power supplies; Random access memory; Space technology; System testing; Voltage control;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896270
