Title :
Single event effects and total ionizing dose results of a low voltage EEPROM
Author :
Krawzsenek, D. ; Hsu, P. ; Anthony, H. ; Land, C.
Author_Institution :
Space Electron. Inc/Maxwell Technol., San Diego, CA, USA
Abstract :
Single event effects and total ionizing dose results for a 28LV010 low voltage (3.3-volt) 1 Mbit EEPROM are presented. The results are compared with 28C010 (5.0-volt) data from similar 1-Mbit EEPROM´s
Keywords :
EPROM; ion beam effects; low-power electronics; 1 Mbit; 28C010; 28LV010; 3.3 V; 5.0 V; heavy ion irradiation; low voltage EEPROM; single event effect; total ionizing dose; Circuit testing; EPROM; Electronic equipment testing; Integrated circuit testing; Low voltage; Performance evaluation; Power supplies; Single event upset; Space technology; System testing;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896271
