A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications

Author

Hueting, N.A. ; Pugh, J.R. ; Engin, E. ; Zain, A. Md ; Sarua, A. ; Heard, P.J. ; Wang, T. ; Cryan, M.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK

fYear

2012

fDate

2-5 July 2012

Firstpage

1

Lastpage

4

Abstract

A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3^rd-order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using micro-photoluminescence.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; finite difference time-domain analysis; focused ion beam technology; gallium compounds; integrated optics; photoluminescence; sapphire; wide band gap semiconductors; 2D FDTD; GaN-AlN-Al₂O₃; deep etched 1D distributed Bragg reflector cavity; dye loaded polymer layer; emission enhancement characterization; gallium nitride distributed Bragg reflector cavity; hybrid electron beam-focused ion beam method; integrated photonics applications; microphotoluminescence; Cavity resonators; Distributed Bragg reflectors; Etching; Fabrication; Finite difference methods; Gallium nitride; Time domain analysis; Distributed Bragg reflector; finite-difference time-domain (FDTD); focused ion beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2012 14th International Conference on

Conference_Location

Coventry

ISSN

2161-2056

Print_ISBN

978-1-4673-2228-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2012.6253827

Filename

6253827