Title :
SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory
Author :
Roth, D.R. ; Kinnison, J.D. ; Carkhuff, B.G. ; Lander, J.R. ; Bognaski, G.S. ; Chao, K. ; Swift, G.M.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Abstract :
The Samsung KM29U128T 128 Mbit and the Toshiba TC58256FT/DC 256 Mbit flash memories were screened for use in the X2000 solid state recorded. Single Event Upset (SEU) and Total Ionizing Dose (TID) results are presented in this paper
Keywords :
flash memories; ion beam effects; 128 Mbit; 256 Mbit; Samsung KM29U128T; Toshiba TC58256FT/DC; flash memory; heavy ion irradiation; single event upset; total ionizing dose; Chaos; Charge pumps; FETs; Flash memory; Laboratories; Nonvolatile memory; Physics; Single event upset; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896277
