DocumentCode :
2788933
Title :
Dose rate and bias dependency of total dose sensitivity of low dropout voltage regulators
Author :
McClure, Steven S. ; Gorelick, Jerry L. ; Pease, Ron ; Johnston, Allan H.
Author_Institution :
Hughes Space & Commun. Co., El Segundo, CA, USA
fYear :
2000
fDate :
2000
Firstpage :
100
Lastpage :
105
Abstract :
Total dose tests of six different low dropout voltage regulators show sensitivity to both dose rate and bias during exposure. All devices tested exhibited Enhanced Low Dose Rate Sensitivity (ELDRS) and performed worse for the unbiased irradiation condition. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact on hardness assurance methodology is discussed
Keywords :
integrated circuit testing; power integrated circuits; radiation effects; radiation hardening (electronics); space vehicle electronics; voltage regulators; Enhanced Low Dose Rate Sensitivity; bias dependency; critical parameters; dose rate; hardness assurance methodology; low dropout voltage regulators; total dose sensitivity; unbiased irradiation condition; Costs; Degradation; Ionizing radiation; Laboratories; Low voltage; Performance evaluation; Propulsion; Regulators; Telephony; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
Type :
conf
DOI :
10.1109/REDW.2000.896278
Filename :
896278
Link To Document :
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