DocumentCode :
2789413
Title :
The effects of the donor concentration and the compensation degree of N-InSb material on the performance of InSb electron bolometer
Author :
Jian-ren Xu ; Ya-qian Gong ; Guo-zhen Zheng ; Song-he Liu ; Shao-ling Guo
Author_Institution :
Shanghai Institute of Technical Physics
fYear :
1989
fDate :
0-0 1989
Firstpage :
169
Lastpage :
172
Abstract :
It is shown by Hall measurements that the hot electron nonlinear T-V characteristics of a-InSb materials critically depend on their compensation degree K and excess donor concentration no. The InSb electron bolometer was fabricated by using a-InSb ma terials with different X and no. The experimental data show that the NEF of the detector made of highly compensated material is better than that made of low compensa tion material.
Keywords :
Bolometers; Detectors; Electrons; Extraterrestrial measurements; Finite impulse response filter; Magnetic field measurement; Magnetic materials; Physics; Plasma temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
Type :
conf
DOI :
10.1109/ICMWFT.1989.763791
Filename :
763791
Link To Document :
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