DocumentCode
2789413
Title
The effects of the donor concentration and the compensation degree of N-InSb material on the performance of InSb electron bolometer
Author
Jian-ren Xu ; Ya-qian Gong ; Guo-zhen Zheng ; Song-he Liu ; Shao-ling Guo
Author_Institution
Shanghai Institute of Technical Physics
fYear
1989
fDate
0-0 1989
Firstpage
169
Lastpage
172
Abstract
It is shown by Hall measurements that the hot electron nonlinear T-V characteristics of a-InSb materials critically depend on their compensation degree K and excess donor concentration no. The InSb electron bolometer was fabricated by using a-InSb ma terials with different X and no. The experimental data show that the NEF of the detector made of highly compensated material is better than that made of low compensa tion material.
Keywords
Bolometers; Detectors; Electrons; Extraterrestrial measurements; Finite impulse response filter; Magnetic field measurement; Magnetic materials; Physics; Plasma temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-87942-717-5
Type
conf
DOI
10.1109/ICMWFT.1989.763791
Filename
763791
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