Deposition and annealing studies of indium tin oxide films

Author

Sundaram, K.B. ; Blanchard, Jila

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1997

fDate

12-14 Apr 1997

Firstpage

230

Lastpage

232

Abstract

Indium tin oxide (ITO) films were deposited on to glass substrates by an RF magnetron sputtering system using a pressed ITO target (In-Sn, 90-10). The deposition rate, electrical, and optical characteristics of the films have been investigated as a function of pressure. The post-deposition annealing has been done for ITO films in an argon gas ambient atmosphere, and the effect of annealing temperature on the electrical, and optical properties of ITO films was studied. It has been found that sheet resistance of the films after annealing was found to decrease, however, there was no significant change in optical transmission after heat treatment

Keywords

annealing; electrical resistivity; indium compounds; light transmission; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; tin compounds; ITO; ITO films; InSnO; RF magnetron sputtering system; annealing; annealing temperature; argon gas ambient atmosphere; deposition; electrical characteristics; glass substrates; heat treatment; optical characteristics; optical transmission; post-deposition annealing; pressure dependence; sheet resistance; Annealing; Argon; Atmosphere; Electric resistance; Glass; Indium tin oxide; Optical films; Radio frequency; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '97. Engineering new New Century., Proceedings. IEEE

Conference_Location

Blacksburg, VA

Print_ISBN

0-7803-3844-8

Type

conf

DOI

10.1109/SECON.1997.598677

Filename

598677