Determination of the thermal lensing in a broad area semiconductor laser amplifier

Author

Bawamia, A.I. ; Eppich, B. ; Paschke, K. ; Wenzel, H. ; Erbert, G. ; Trankle, G.

Author_Institution

Ferdinand Braun Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

We propose a simple experiment that allows to measure the thermal lens created in a semiconductor laser amplifier by current pumping of the device. In this technique, we make use of the deviation of a probe beam injected at different lateral locations due to the different local refractive index gradients. The epitaxial structure of the semiconductor laser amplifier consists of AlGaAs confinement and cladding layers and an InGaAs/GaAsP double quantum well active region. The diode is 1.3 mm long and 0.4 mm wide, and has a current injection stripe of 100 mum.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical pumping; refractive index; semiconductor optical amplifiers; thermal lensing; AlGaAs; InGaAs-GaAsP; broad area semiconductor laser amplifier; cladding layer; current pumping; diode current injection stripe; epitaxial structure; local refractive index gradient; probe beam injection; quantum well active region; size 0.4 mm; size 1.3 mm; size 100 mum; thermal lensing; Current measurement; Laser beams; Laser excitation; Lenses; Molecular beam epitaxial growth; Probes; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers; Thermal lensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192287

Filename

5192287