Analysis of in-well pumping of semiconductor lasers by microscopic gain calculations

Author

Bückers, C. ; Bäumner, A. ; Thränhardt, A. ; Hader, J. ; Moloney, J.V. ; Koch, S.W. ; Zhang, Wei ; Ackemann, T.

Author_Institution

Dept. of Phys. & Mater. Sci. Center, Philipps Univ. Marburg, Marburg, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this contribution we are analyzing the properties of a gain structure based on seventeen 10 nm wide Al-GalnAs QW designed for operation in the 850 nm range. Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations because it increases the spectrum of pump diodes suitable for a given emission wavelength.

Keywords

III-V semiconductors; aluminium; gallium compounds; indium compounds; optical pumping; quantum well lasers; Al-GaInAs; barrier states; in-well pumping; microscopic gain calculations; quantum well lasers; semiconductor lasers; Absorption; Laser excitation; Laser theory; Microscopy; Optical pumping; Physics; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192288

Filename

5192288