Title :
Analysis of in-well pumping of semiconductor lasers by microscopic gain calculations
Author :
Bückers, C. ; Bäumner, A. ; Thränhardt, A. ; Hader, J. ; Moloney, J.V. ; Koch, S.W. ; Zhang, Wei ; Ackemann, T.
Author_Institution :
Dept. of Phys. & Mater. Sci. Center, Philipps Univ. Marburg, Marburg, Germany
Abstract :
In this contribution we are analyzing the properties of a gain structure based on seventeen 10 nm wide Al-GalnAs QW designed for operation in the 850 nm range. Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations because it increases the spectrum of pump diodes suitable for a given emission wavelength.
Keywords :
III-V semiconductors; aluminium; gallium compounds; indium compounds; optical pumping; quantum well lasers; Al-GaInAs; barrier states; in-well pumping; microscopic gain calculations; quantum well lasers; semiconductor lasers; Absorption; Laser excitation; Laser theory; Microscopy; Optical pumping; Physics; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192288
