DocumentCode
2790617
Title
Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples
Author
Sundaram, K.B. ; Blanchard, Jila ; Albin, S. ; Zheng, J. ; Lavarias, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fYear
1997
fDate
12-14 Apr 1997
Firstpage
264
Lastpage
266
Abstract
Porous silicon samples were prepared by an electrochemical etching technique using various n-type and p-type silicon samples with different resistivities. Photoluminescence studies were performed on these porous silicon layers prepared from diamond scratched samples at room temperature. It is found that there is a redshift for these samples when compared to unscratched silicon samples
Keywords
elemental semiconductors; etching; photoluminescence; porous materials; red shift; semiconductor thin films; silicon; size effect; (100) single crystal wafers; Si; diamond scratched samples; electrochemical etching; elemental semiconductor; n-type; p-type; photoluminescence spectrum redshifting; porous silicon layers; Circuits; Cost function; Crystalline materials; Etching; Optical materials; Photoluminescence; Photonic band gap; Silicon; Surface resistance; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '97. Engineering new New Century., Proceedings. IEEE
Conference_Location
Blacksburg, VA
Print_ISBN
0-7803-3844-8
Type
conf
DOI
10.1109/SECON.1997.598687
Filename
598687
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