Title :
Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?
Author :
Yang, C.C. ; Chi-Feng Huang ; Yeh, Dong-Ming ; Chen, Cheng-Yen ; Lu, Chih-Feng ; Tang, Tsung-Yi ; Jeng-Me Huang ; Lu, Yen-Cheng ; Chen, Yung-Shen ; Shiao, Wen-Yu ; Shen, Kun-Ching ; Li, Yun-Li ; Huang, Jeng-Jie
Author_Institution :
Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, 10617, China
Abstract :
We report some recent developments in all-semiconductor multi-color and white-light light-emitting diodes. The potential of the development of phosphor-free all-InGaN/GaN quantum-well white-light light-emitting diode will be evaluated.
Keywords :
Epitaxial growth; Fabrication; Gallium nitride; Indium; Light emitting diodes; Optical devices; Optical mixing; Phosphors; Quantum well devices; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431538
