DocumentCode
2790815
Title
Novel large signal mathematical model of MM-wave gtinn device
Author
Ning Chen ; Zhang-Liang Sun ; Si-Fan Li
Author_Institution
Southeast University
fYear
1989
fDate
0-0 1989
Firstpage
500
Lastpage
502
Abstract
The nonlinear characteristic of Gunn device is analyzed on the basis of device physics. A novel mathematical representation of the large signal dynamic characteristic of the Gunn device is presented.
Keywords
Dielectric constant; Doping; Electron mobility; Gallium arsenide; Gunn devices; Integrated circuit modeling; Mathematical model; RF signals; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-87942-717-5
Type
conf
DOI
10.1109/ICMWFT.1989.763889
Filename
763889
Link To Document