DocumentCode
2791242
Title
Time-resolved photoluminescence of GaN nanowires of different crystallographic orientations
Author
Chin, A.H. ; Ahn, T.S. ; Li, H. ; Vaddiraju, S. ; Bardeen, C.J. ; Ning, C.Z. ; Sunkara, M.K.
Author_Institution
Center for Advanced Aerospace Materials and Devices, NASA Ames Research Center, Moffett Field California 94035, USA
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Our studies of time-integrated and time-resolved photoluminescence of a-axis and c-axis GaN nanowires demonstrate that the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires can be attributed to surface state emission.
Keywords
Aerospace materials; Crystallography; Electron traps; Frequency; Gallium nitride; Instruments; NASA; Nanowires; Photoluminescence; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431569
Filename
4431569
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