• DocumentCode
    2791428
  • Title

    Design Considerations for Next Generation Radiation Hardened SRAMs for Space Applications

  • Author

    Haddad, Nadim ; Rockett, Leonard ; Doyle, Scott ; Ramaswamy, Shankarnarayanan ; Hoang, Tri

  • Author_Institution
    BAE Syst., Manassas, VA
  • fYear
    2005
  • fDate
    5-12 March 2005
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    There is an ever-present focus on increasing the functional density of components used in space electronics, that is, putting more functional capacity in smaller, lighter packages. Packages with small footprints use less board area, potentially reducing system mass. High-density devices may reduce the total required chip count, further eliminating mass and improving system reliability. Low power devices do not overburden the power budget. All of these factors potentially lower the weight of the satellite reducing launch cost and lowering overall operational costs. Increasing the bit density of SRAMs used in space electronics to better realize these positive outcomes presents significant new challenges with respect to radiation hardening of these high-performance, high-density components. BAE systems is designing the next generation of radiation hardened SRAMs. This paper describes the design considerations for advanced radiation hardened SRAMs
  • Keywords
    SRAM chips; avionics; memory architecture; radiation hardening (electronics); BAE systems; SRAM; functional density; high-density devices; radiation hardening; space electronics; system reliability; CMOS technology; Circuits; Costs; Electronics packaging; Microelectronics; Production; Radiation hardening; Random access memory; Single event upset; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace Conference, 2005 IEEE
  • Conference_Location
    Big Sky, MT
  • Print_ISBN
    0-7803-8870-4
  • Type

    conf

  • DOI
    10.1109/AERO.2005.1559542
  • Filename
    1559542