Three-dimensional integration technology using through-si via based on reconfigured wafer-to-wafer bonding

Three-dimensional (3-D) integration technologies using through-silicon vias (TSV´s) are described. We have developed a 3-D integration technology using TSV´s based on a wafer-to-wafer bonding method for the fabrication of new 3-D LSIs. A 3-D image sensor chip, 3-D shared memory chip, 3-D artificial retina chip and 3-D microprocessor test chip have been fabricated by using this technology. In addition, we have developed a new 3-D integration technology based on a reconfigured wafer-to-wafer bonding method called a super-chip integration. A number of known good dies (KGDs) are simultaneously aligned and bonded onto lower chips or wafers with high alignment accuracy by using a new self-assembly technique in a super-chip integration.