Title :
1/f Noise and DC Characterization of Partially Depleted SOI N-and P-MOSFETs from 20 º C-250 º C
Author :
Ericson, M. Nance ; Hasanuzzaman, Md ; Terry, S.C. ; Britton, C.L. ; Ohme, B. ; Frank, S.S. ; Richmond, J.A. ; Blalock, B.J.
Author_Institution :
Oak Ridge Nat. Lab.
Abstract :
A summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8 mum process. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (gm/Id), output resistance (rds), and threshold voltage (Vt). These parameters are summarized as a function of both gate length (0.8mum, 2.0mum, 5.0mum, and 20mum) and temperature (20deg to 300degC). Noise characterization of these devices is also presented with an emphasis on flicker noise over temperature (20deg to 250degC). Data is presented in terms of both drain current and inversion coefficient, where appropriate. Use of this information provides the designer with an excellent tool for estimating analog circuit performance in applications where wide temperature range performance is required
Keywords :
1/f noise; MOSFET; analogue circuits; semiconductor device models; semiconductor device noise; silicon-on-insulator; 0.8 micron; 1/f noise; 2.0 micron; 20 micron; 20 to 250 C; 20 to 300 C; 5.0 micron; DC characterization; NMOSFET; PMOSFET; analog circuit design; device transconductance efficiency; drain current; flicker noise; inversion coefficient; low frequency noise; partially depleted SOI; small-signal parameters; 1f noise; Analog circuits; Circuit noise; Frequency measurement; Low-frequency noise; MOSFET circuits; Noise measurement; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Aerospace Conference, 2005 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-8870-4
DOI :
10.1109/AERO.2005.1559566
