DocumentCode :
2792087
Title :
Breakdown strength affected by the interface roughness at the semiconducting layer in XLPE power cables
Author :
Okamoto, Tatsuki ; Hozumi, Naohiro ; Ishida, Makoto
Author_Institution :
CRIEPI, Yokusuka, Japan
fYear :
1991
fDate :
8-12 Jul 1991
Firstpage :
127
Abstract :
The authors describe the relationship between the breakdown strength and the roughness of the semiconducting interface in model XLPE (cross-linked polyethylene) power cables with insulation of 3.5 mm thickness. Nine kinds of specimen cables were manufactured out of seven kinds of semiconducting layer materials. Six kinds of additives were used to modify the semiconducting materials. The maximum breakdown strength of the specimens was about 1.6 MV/cm (1% Weibull strength) and 1.2 times higher than that of a specimen without additives. The semiconducting interface roughness of less than 1 μm was quantized by taking transmission electron microscopic photographs of the interface. It was found that the roughness of the outer semiconducting interface is larger than that of the inner ones and has a strong correlation with the breakdown strength
Keywords :
cable insulation; electric breakdown of solids; electric strength; organic insulating materials; polymers; power cables; 3.5 mm; XLPE power cables; additives; breakdown strength; inner semiconducting interface; interface roughness; outer semiconducting interface; semiconducting layer; specimen cables; Additives; Cable insulation; Electric breakdown; Electrons; Polyethylene; Power cables; Semiconductivity; Semiconductor device breakdown; Semiconductor device manufacture; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
Type :
conf
DOI :
10.1109/ICPADM.1991.172030
Filename :
172030
Link To Document :
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