Title :
Electrical properties and electroluminescence of ZnO composite thin-film varistors
Author :
Nakajima, T. ; Suzuoki, Y. ; Mizutani, T. ; Ieda, Mirai ; Fujita, H.
Author_Institution :
Dept. of Electr. Eng., Nagoya Univ., Japan
Abstract :
ZnO composite thin films (ZnO-Bi2O3 two-layer thin films) were prepared by RF and ion-beam sputtering. The reverse-biased ZnO composite two-layer films showed highly nonlinear conduction, and its mechanism is discussed on the basis of current-voltage, capacitance-voltage, and electroluminescence characteristics. The bandgap electroluminescence (3.2 eV) from the ZnO-Bi2O3 two-layer sample was observed in the breakdown region. This suggests that holes are generated in the ZnO depletion layer and modify the interfacial barrier height in the breakdown region. The capacitance of the ZnO-Bi2O3 two-layer sample decreased steeply in the breakdown region. This is associated with barrier height modulation by trapping of minority carriers at the grain boundary and supports the above explanation
Keywords :
bismuth compounds; electroluminescence; electronic conduction in insulating thin films; sputtered coatings; varistors; zirconium compounds; 3.2 eV; C-V characteristics; I-V characteristics; RF sputtering; ZnO-Bi2O3; bandgap electroluminescence; barrier height modulation; breakdown region; capacitance; capacitance-voltage characteristics; composite thin-film varistors; current voltage characteristics; electrical properties; electroluminescence; ion-beam sputtering; nonlinear conduction; reverse-biased ZnO composite; two-layer thin films; Capacitance; Capacitance-voltage characteristics; Conductive films; Electric breakdown; Electroluminescence; Grain boundaries; Photonic band gap; Radio frequency; Sputtering; Zinc oxide;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
DOI :
10.1109/ICPADM.1991.172038
