DocumentCode :
2792387
Title :
Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor
Author :
Gansen, Eric J. ; Rowe, Mary A. ; Greene, Marion ; Rosenberg, Danna ; Harvey, Todd E. ; Su, Mark Y. ; Hadfield, Robert H. ; Nam, Sae Woo ; Mirin, Richard P.
Author_Institution :
National Institute of Standards and Technology, Boulder, Colorado 80305, USA
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate the photon-number-resolving capabilities of a novel quantum dot, optically gated, field-effect transistor cooled to 4 K. Peaks are observed in the detector¿s response to highly attenuated laser pulses in accordance with Poisson statistics.
Keywords :
Buffer layers; FETs; Gallium arsenide; Gold; Intrusion detection; Optical attenuators; Optical pulses; Photonics; Quantum dot lasers; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431640
Filename :
4431640
Link To Document :
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