Circuit techniques for efficient linearised GaAs MMIC´s

Author

Haigh, D.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

fYear

1992

fDate

1-3 June 1992

Firstpage

177

Lastpage

180

Abstract

Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linearisation techniques; microwave isolators; nonlinear network synthesis; GaAs; depletion-mode GaAs MESFETs; high-efficiency implementation; linear functions; linearized isolator; monolithic microwave integrated circuit; square-law FET characteristic; synthesis method; Circuit synthesis; Gallium arsenide; Integrated circuit technology; Isolators; MESFET integrated circuits; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186030

Filename

186030