Title :
Power semiconductor device modelling dedicated to circuit simulation
Author :
Leturcq, Philippe
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
The aim of this paper is to recall the problematics of circuit simulation in the field of power electronics and to critically review recent approaches to semiconductor device modelling for that purpose. In particular, as far as hardware problems are concerned, the discussion puts forward the need for physics-based models taking into account the distributed nature of charge carrier transport
Keywords :
circuit simulation; power semiconductor devices; semiconductor device models; transport processes; circuit simulation; distributed charge carrier transport; hardware problems; physics-based models; power electronics; power semiconductor device modelling; semiconductor device modelling; Circuit simulation; Computational modeling; Hardware; Power semiconductor devices; Power semiconductor switches; Power system analysis computing; Power system modeling; Power system simulation; Semiconductor devices; Switching circuits;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764034
