Title :
Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2
Author :
Paillet, P. ; Touron, J.L. ; Leray, J.L. ; Cirba, C. ; Michez, A.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO2 have been determined by finite elements simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO2 structures
Keywords :
MIS structures; electron traps; elemental semiconductors; finite element analysis; hole traps; radiation effects; silicon; silicon compounds; thermally stimulated currents; MOS structure; Si-SiO2; energy levels; finite element simulation; multilevel radiation induced charge trapping; post-irradiation effect; thermally activated charge detrapping; Charge carrier processes; Charge measurement; Current measurement; Differential equations; Electron traps; Energy states; Finite element methods; Photonic band gap; Poisson equations; Spontaneous emission;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698841
