DocumentCode
2793049
Title
Energy capability of power devices with Cu layer integration
Author
Chung, Young S. ; Willett, Terry ; Macary, Veronique ; Merchant, Steve ; Baird, Bob
Author_Institution
Transp. Silicon Technol. Center, Motorola, Mesa, AZ, USA
fYear
1999
fDate
1999
Firstpage
63
Lastpage
66
Abstract
Device level solutions are necessary for thermal management in smart power devices. For many automotive applications, the power pulses are too short for for packaging to affect the temperature. A thick copper layer is a potential solution because of its thermal properties. This paper reports for the first time experimental results on the energy capability of DMOS power devices with a thick copper layer integrated into a smart power technology. It was experimentally observed that a thick copper layer over the power device enhances energy capability significantly. The mechanics of the thick copper layer in increasing the energy capability is discussed
Keywords
MOS integrated circuits; automotive electronics; cooling; copper; integrated circuit metallisation; integrated circuit packaging; metallic thin films; power integrated circuits; thermal management (packaging); Cu; Cu layer integration; DMOS power devices; automotive applications; device level thermal management; energy capability; packaging; power device; power devices; power pulses; smart power devices; smart power technology; thermal properties; thick copper layer; Automotive applications; Copper; Energy measurement; Packaging; Pulse shaping methods; Shape; Silicon; Temperature; Thermal conductivity; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764051
Filename
764051
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