• DocumentCode
    2793049
  • Title

    Energy capability of power devices with Cu layer integration

  • Author

    Chung, Young S. ; Willett, Terry ; Macary, Veronique ; Merchant, Steve ; Baird, Bob

  • Author_Institution
    Transp. Silicon Technol. Center, Motorola, Mesa, AZ, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    Device level solutions are necessary for thermal management in smart power devices. For many automotive applications, the power pulses are too short for for packaging to affect the temperature. A thick copper layer is a potential solution because of its thermal properties. This paper reports for the first time experimental results on the energy capability of DMOS power devices with a thick copper layer integrated into a smart power technology. It was experimentally observed that a thick copper layer over the power device enhances energy capability significantly. The mechanics of the thick copper layer in increasing the energy capability is discussed
  • Keywords
    MOS integrated circuits; automotive electronics; cooling; copper; integrated circuit metallisation; integrated circuit packaging; metallic thin films; power integrated circuits; thermal management (packaging); Cu; Cu layer integration; DMOS power devices; automotive applications; device level thermal management; energy capability; packaging; power device; power devices; power pulses; smart power devices; smart power technology; thermal properties; thick copper layer; Automotive applications; Copper; Energy measurement; Packaging; Pulse shaping methods; Shape; Silicon; Temperature; Thermal conductivity; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764051
  • Filename
    764051