Title :
0.35 μm, 43 μΩcm2, 6 mΩ power MOSFET to power future microprocessor
Author :
Sun, Nick X. ; Huang, Alex Q. ; Lee, F.C.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, a lateral power MOSFET using 0.35 μm VLSI CMOS technology is demonstrated to have a 6 mΩ on-resistance and a gate charge of 2.7 nC. For high frequency, low voltage power switching conversion applications, the deep sub-micron CMOS/BiCMOS based technology is clearly superior to conventional vertical power MOSFET technology
Keywords :
CMOS integrated circuits; VLSI; driver circuits; electric resistance; microprocessor chips; power MOSFET; power integrated circuits; power semiconductor switches; 0.35 micron; 6 mohm; CMOS/BiCMOS based technology; VLSI CMOS technology; gate charge; high frequency low voltage power switching conversion applications; lateral power MOSFET; microprocessor; on-resistance; power MOSFET; vertical power MOSFET technology; Artificial intelligence; Buck converters; Electric breakdown; Immune system; MOSFET circuits; Medical simulation; Neural networks; Power MOSFET; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764058
