• DocumentCode
    2793238
  • Title

    Properties of CoolMOSTM between 420 K and 80 K-the ideal device for cryogenic applications

  • Author

    Schlögl, A.E. ; Deboy, G. ; Lorenzen, H.W. ; Linnert, U. ; Schulze, H.-J. ; Stengl, J.P.

  • Author_Institution
    Corp. Technol., Siemens AG, Munich, Germany
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    The electrical properties of CoolMOSTM, the first representative of a new generation of power MOSFETs, based on the concept of charge compensation, were investigated at temperatures between 80 K and 423 K. Since it unifies all the advantages of MOSFETs, where additionally higher current densities are possible, the device is not only very attractive for power electronic systems at ambient temperatures, but also for cryogenic temperatures T>77 K
  • Keywords
    charge compensation; cryogenic electronics; current density; low-temperature techniques; power MOSFET; semiconductor device testing; 77 K; 80 to 423 K; CoolMOS; MOSFETs; charge compensation; cryogenic applications; cryogenic temperatures; current density; electrical properties; power MOSFETs; power electronic systems; Circuits; Conductivity; Cryogenics; Current density; Diodes; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power generation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764063
  • Filename
    764063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2793238