Title :
Predicted electrical characteristics of 4500 V super multi-RESURF MOSFETs
Author :
Kawaguchi, Yusuke ; Nakamura, Kazutoshi ; Yahata, Akihiro ; Nakagawa, Akio
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we show the optimized device parameters for various voltage multi-RESURF devices based on exact simulation. In addition, we also present, for the first time, the exact static and transient simulation of a 4500 V multi-RESURF device. The distinguishing feature of the multi-RESURF MOSFET is that a storage time exists and that the fall time is extremely small. The multi-RESURF MOSFET was found to be an ideal device for high voltage applications, superior to IGBTs
Keywords :
optimisation; power MOSFET; semiconductor device models; transient analysis; 4500 V; electrical characteristics; fall time; high voltage applications; multi-RESURF MOSFET; multi-RESURF device; multi-RESURF devices; optimized device parameters; static simulation; storage time; super multi-RESURF MOSFETs; transient simulation; Breakdown voltage; Diodes; Electric variables; Electrons; Impurities; Insulated gate bipolar transistors; Insulation; Leakage current; MOSFETs; Tunneling;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764066
