Predicted electrical characteristics of 4500 V super multi-RESURF MOSFETs

Author

Kawaguchi, Yusuke ; Nakamura, Kazutoshi ; Yahata, Akihiro ; Nakagawa, Akio

Author_Institution

Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1999

fDate

1999

Firstpage

95

Lastpage

98

Abstract

In this paper, we show the optimized device parameters for various voltage multi-RESURF devices based on exact simulation. In addition, we also present, for the first time, the exact static and transient simulation of a 4500 V multi-RESURF device. The distinguishing feature of the multi-RESURF MOSFET is that a storage time exists and that the fall time is extremely small. The multi-RESURF MOSFET was found to be an ideal device for high voltage applications, superior to IGBTs

Keywords

optimisation; power MOSFET; semiconductor device models; transient analysis; 4500 V; electrical characteristics; fall time; high voltage applications; multi-RESURF MOSFET; multi-RESURF device; multi-RESURF devices; optimized device parameters; static simulation; storage time; super multi-RESURF MOSFETs; transient simulation; Breakdown voltage; Diodes; Electric variables; Electrons; Impurities; Insulated gate bipolar transistors; Insulation; Leakage current; MOSFETs; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764066

Filename

764066