Advanced high current, high reliable IGBT module with improved multi-chip structure

Author

Saito, R. ; Koike, Y. ; Tanaka, A. ; Kushima, T. ; Shimizu, H. ; Nonoyama, S.

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1999

fDate

1999

Firstpage

109

Lastpage

112

Abstract

Advanced IGBT module technology to realize high reliability and high current capability was presented. The 60,000 cycles long term power cycle capability of the low thermal expansion base module was demonstrated. A stress release tall mounting structure and a ceramic metal pull back structure were shown to be essential for high thermal cycle capability. A multi-end main terminal with multichip substrate and high resistivity sense emitter terminal technology was applied to realize high current capability and uniformity in the large high power module

Keywords

ceramic packaging; insulated gate bipolar transistors; multichip modules; power bipolar transistors; semiconductor device reliability; thermal expansion; thermal stresses; IGBT module technology; ceramic metal pull back structure; current capability; current uniformity; high current IGBT module; high reliability IGBT module; low thermal expansion base module; multi-chip structure; multi-end main terminal; multichip substrate; power cycle capability; reliability; resistivity; sense emitter terminal technology; stress release tall mounting structure; thermal cycle capability; Artificial intelligence; Bonding; Fasteners; Fatigue; Heat sinks; Insulated gate bipolar transistors; Life estimation; Testing; Thermal stresses; Water heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764074

Filename

764074