A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier

Author

Gupta, R.N. ; Min, W.G. ; Chow, T.P. ; Chang, H.-R. ; Winterhalter, C.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1999

fDate

1999

Firstpage

117

Lastpage

120

Abstract

A new trench junction rectifier, which uses sidewall oxide spacers to separate the main PIN region from the adjacent Schottky regions, is described. The Schottky regions help remove minority carriers from the drift region during turn off and facilitate forward conduction in the on-state. Simulations and experimental measurements have shown that the peak reverse current and reverse recovery charge are significantly improved along with a lower forward voltage drop when compared to the conventional P⁺IN rectifier

Keywords

Schottky diodes; elemental semiconductors; isolation technology; minority carriers; p-i-n diodes; power semiconductor diodes; semiconductor device measurement; semiconductor device models; silicon; solid-state rectifiers; P⁺IN rectifier; PIN region; Schottky regions; Si trench sidewall oxide-merged PIN/Schottky rectifier; Si-SiO₂; TSOX-MPS rectifier; drift region; forward voltage drop; minority carrier removal; on-state forward conduction; peak reverse current; planarized HV silicon trench sidewall oxide-merged PIN/Schottky rectifier; reverse recovery charge; sidewall oxide spacers; simulations; trench junction rectifier; Charge carrier lifetime; Charge measurement; Current measurement; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; Rectifiers; Schottky barriers; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764077

Filename

764077