The recessed-gate IGBT structure

Author

Nemoto, Michio ; Baliga, B.Jayant

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1999

fDate

1999

Firstpage

149

Lastpage

152

Abstract

A recessed gate (RG) structure is presented for the IGBT and its characteristics are compared with DMOS and UMOS-IGBT for the first time. For the fabrication of the RG structure, it is not necessary to perform the difficult polysilicon planarization step required for the UMOS-IGBT. The breakdown voltage of the RG-IGBT is close to that of the DMOS-IGBT, even though it has a trench structure. The RG-IGBT has a lower on-state voltage drop when compared with the DMOS-IGBT because there is no JFET resistance. The parasitic thyristor latch-up current density of the RG-IGBT is higher than that of the DMOS-IGBT. In addition, the RG-IGBT has a wide forward bias SOA (FBSOA). The saturation current density of the RG-IGBT is lower than that of the UMOS-IGBT, leading to a superior short circuit SOA (SC-SOA)

Keywords

current density; insulated gate bipolar transistors; isolation technology; power bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device testing; DMOS-IGBT; FBSOA; IGBT; JFET resistance; RG structure fabrication; SC-SOA; UMOS-IGBT; breakdown voltage; forward bias SOA; on-state voltage drop; parasitic thyristor latch-up current density; polysilicon planarization; recessed-gate IGBT structure; saturation current density; short circuit SOA; trench structure; Circuits; Contact resistance; Current density; Electrons; Fabrication; Insulated gate bipolar transistors; Planarization; Roentgenium; Threshold voltage; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764084

Filename

764084