DocumentCode :
2793536
Title :
A comparative study of high voltage (4 kV) power rectifiers PiN/MPS/SSD/SPEED
Author :
Sawant, Shankar ; Baliga, B.Jayant
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fYear :
1999
fDate :
1999
Firstpage :
153
Lastpage :
156
Abstract :
This paper provides for the first time a comparative experimental study of different high voltage power rectifier structures designed based on the anode injection efficiency control concept. Trade-off curves of peak reverse current density, reverse recovery charge extracted and reverse dJ/dt versus forward voltage drop showed the merged PiN-Schottky (MPS), self-adapting P-emitter diode (SPEED), and static shielding diode (SSD) rectifiers to have far superior switching characteristics when compared to conventional PiN diodes. The uniform carrier distribution observed in the MPS/SPEED/SSD rectifiers leads to a universal trade-off curve in anode injection efficiency control diodes that is inherently superior to that obtained through lifetime control techniques. The SPEED rectifier is most attractive for high voltage applications due to its low reverse leakage current, while the MPS rectifier provides an excellent alternative to the high voltage PiN diode due to the identical fabrication process and its superior switching characteristics
Keywords :
Schottky diodes; current density; leakage currents; p-i-n diodes; power semiconductor diodes; power semiconductor switches; solid-state rectifiers; switching; 4 kV; MPS power rectifiers; MPS rectifier; PiN power rectifiers; SPEED power rectifiers; SPEED rectifier; SSD power rectifiers; anode injection efficiency control; anode injection efficiency control diodes; fabrication process; forward voltage drop; high voltage PiN diode; high voltage power rectifier structures; high voltage power rectifiers; lifetime control techniques; merged PiN-Schottky rectifier; peak reverse current density; reverse leakage current; reverse recovery charge; self-adapting P-emitter diode rectifier; static shielding diode rectifier; switching characteristics; trade-off curves; uniform carrier distribution; universal trade-off curve; Anodes; Current density; Fabrication; Leakage current; Low voltage; Rectifiers; Schottky diodes; Semiconductor diodes; Thyristors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1063-6854
Print_ISBN :
0-7803-5290-4
Type :
conf
DOI :
10.1109/ISPSD.1999.764085
Filename :
764085
Link To Document :
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