Title :
A new high-voltage integrated switch: the “thyristor dual” function
Author :
Sanchez, J.L. ; Breil, M. ; Austin, P. ; Laur, J.-P. ; Jalade, J. ; Rousset, B. ; Foch, H.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, a new monolithic integrated device providing the “thyristor dual” function without auxiliary supply and based on the functional integration mode is investigated. The influence of the physical and technological parameters of this new structure upon the main electrical characteristics and the physical behaviour has been analyzed using the ATLAS software tool. An optimized device is proposed and test structures have been fabricated
Keywords :
MOS-controlled thyristors; optimisation; power semiconductor switches; semiconductor device models; semiconductor device testing; software tools; ATLAS software tool; auxiliary supply; electrical characteristics; functional integration mode; high-voltage integrated switch; monolithic integrated device; optimized device; physical behaviour; physical parameters; technological parameters; test structures; thyristor dual function switch; Application software; Electric variables; MOSFET circuits; Semiconductor diodes; Software tools; Switches; Testing; Thyristors; Voltage control; Zero voltage switching;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764086
