• DocumentCode
    279364
  • Title

    Acoustic and dielectric losses in pure and doped Bi12SiO 20 (BSO) single crystals

  • Author

    Chertkov, I.L. ; Kudzin, A.Y. ; Volnyanskiy, M.D.

  • Author_Institution
    Dniepropetrovsk State Univ., Ukraine
  • fYear
    1992
  • fDate
    7-10 Sep 1992
  • Firstpage
    471
  • Lastpage
    472
  • Abstract
    Doping of Bi12SiO20 (BSO) single crystals by cations of 2- and 3- valence metals is common to control their properties. But the real defect structure of BSO has not been studied completely. This report shows the results of application of internal friction method in combination with dielectric and electric measurements to investigate defects occurring in crystals after doping by Cr, Al and annealing in vacuo
  • Keywords
    acoustoelectric effects; annealing; bismuth compounds; dielectric loss measurement; internal friction; BSO:Al; BSO:Cr; Bi12SiO20:Al; Bi12SiO20:Cr; acoustic losses; annealing; defect structure; dielectric losses; dieletric measurements; electric measurements; internal friction method;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Dielectric Materials, Measurements and Applications, 1992., Sixth International Conference on
  • Conference_Location
    Manchester
  • Print_ISBN
    0-85296-551-6
  • Type

    conf

  • Filename
    186985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=279364