DocumentCode :
279364
Title :
Acoustic and dielectric losses in pure and doped Bi12SiO 20 (BSO) single crystals
Author :
Chertkov, I.L. ; Kudzin, A.Y. ; Volnyanskiy, M.D.
Author_Institution :
Dniepropetrovsk State Univ., Ukraine
fYear :
1992
fDate :
7-10 Sep 1992
Firstpage :
471
Lastpage :
472
Abstract :
Doping of Bi12SiO20 (BSO) single crystals by cations of 2- and 3- valence metals is common to control their properties. But the real defect structure of BSO has not been studied completely. This report shows the results of application of internal friction method in combination with dielectric and electric measurements to investigate defects occurring in crystals after doping by Cr, Al and annealing in vacuo
Keywords :
acoustoelectric effects; annealing; bismuth compounds; dielectric loss measurement; internal friction; BSO:Al; BSO:Cr; Bi12SiO20:Al; Bi12SiO20:Cr; acoustic losses; annealing; defect structure; dielectric losses; dieletric measurements; electric measurements; internal friction method;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Dielectric Materials, Measurements and Applications, 1992., Sixth International Conference on
Conference_Location :
Manchester
Print_ISBN :
0-85296-551-6
Type :
conf
Filename :
186985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=279364
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