DocumentCode
2793649
Title
Effects of multiple current pulses on the microstructure and electrical properties of zinc oxide varistors
Author
Sargent, R.A. ; Darveniza, M. ; Dunlop, G.L.
Author_Institution
Queensland Univ., St. Lucia, Qld., Australia
fYear
1991
fDate
8-12 Jul 1991
Firstpage
509
Abstract
Multiple pulses were seen to be much more detrimental to the stability of a ZnO varistor than single pulses of the same magnitude. They were observed to lead to an increase in temperature and some vaporization. The degraded varistors were found to contain cracks in which an additional phase was situated. All experimental results indicate that this phase is amorphous in nature. A possible mechanism for its formation is proposed which assumes a nonuniform temperature distribution due to the development of extremely localized hot spots. The pulse energy is concentrated into very small regions, leading to high local temperatures which decrease rapidly due to conduction to the surrounding material. This leads to the formation of an amorphous phase. This phase could affect the electrical properties either by lowering the resistance of the material at low voltages or by affecting the metastable component of the potential barrier that exists at the grain boundaries of the varistor
Keywords
ceramics; cracks; crystal microstructure; electrical conductivity of crystalline semiconductors and insulators; grain boundaries; semiconductor materials; temperature distribution; varistors; zinc compounds; ZnO varistor; amorphous phase; cracks; degraded varistors; electrical properties; grain boundaries; localized hot spots; metastable component; microstructure; multiple current pulses; nonuniform temperature distribution; potential barrier; stability; vaporization; Amorphous materials; Conducting materials; Degradation; Electric resistance; Low voltage; Microstructure; Stability; Temperature distribution; Varistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location
Tokyo
Print_ISBN
0-87942-568-7
Type
conf
DOI
10.1109/ICPADM.1991.172109
Filename
172109
Link To Document