Title :
The effect of charge in junction termination extension passivation dielectrics
Author :
Trost, Jason R. ; Ridley, Rodney S. ; Khan, M. Kamal, Sr. ; Grebs, Thomas ; Evans, Howard ; Arthur, Stephen
Author_Institution :
Semicond. Div., Harris Corp., Mountaintop, PA, USA
Abstract :
The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing
Keywords :
dielectric thin films; passivation; power semiconductor diodes; semiconductor device reliability; surface charging; thermal stresses; 3000 V; blocking capability; blocking junction; charge effects; device operation; edge termination; high temperature reverse bias stressing; junction termination extension; junction termination extension passivation dielectrics; passivation thin films; planar power diode; power devices; reliability; Breakdown voltage; Dielectric devices; Maintenance; Passivation; Semiconductor device reliability; Semiconductor diodes; Silicon; Strontium; Temperature; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764094
