The effect of charge in junction termination extension passivation dielectrics

Author

Trost, Jason R. ; Ridley, Rodney S. ; Khan, M. Kamal, Sr. ; Grebs, Thomas ; Evans, Howard ; Arthur, Stephen

Author_Institution

Semicond. Div., Harris Corp., Mountaintop, PA, USA

fYear

1999

fDate

1999

Firstpage

189

Lastpage

192

Abstract

The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing

Keywords

dielectric thin films; passivation; power semiconductor diodes; semiconductor device reliability; surface charging; thermal stresses; 3000 V; blocking capability; blocking junction; charge effects; device operation; edge termination; high temperature reverse bias stressing; junction termination extension; junction termination extension passivation dielectrics; passivation thin films; planar power diode; power devices; reliability; Breakdown voltage; Dielectric devices; Maintenance; Passivation; Semiconductor device reliability; Semiconductor diodes; Silicon; Strontium; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764094

Filename

764094