A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices

Author

Fürböck, C. ; Thalhammer, R. ; Litzenberger, M. ; Seliger, N. ; Pogany, D. ; Gornik, E. ; Wachutka, G.

Author_Institution

Inst. for Solid State Electron., Tech. Univ. Wien, Austria

fYear

1999

fDate

1999

Firstpage

193

Lastpage

196

Abstract

We present a differential backside laser probing technique for the investigation of lateral temperature variations in power devices. The method is applied to analyze the temperature evolution in IGBTs operated under short circuit conditions. The extraction of the temperature from optical modulation signals is supported by electro-thermal device simulations, taking into account sample preparation effects

Keywords

insulated gate bipolar transistors; measurement by laser beam; optical modulation; power bipolar transistors; semiconductor device measurement; semiconductor device models; specimen preparation; temperature distribution; temperature measurement; thermal analysis; IGBTs; differential backside laser probing technique; electro-thermal device simulations; lateral temperature distribution; lateral temperature variation; optical modulation signals; power devices; sample preparation effects; short circuit conditions; temperature evolution; temperature extraction; Circuit simulation; Detectors; Frequency; Laser beams; Metallization; Phase detection; Phase measurement; Pulse measurements; Signal detection; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764095

Filename

764095