Title :
A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices
Author :
Fürböck, C. ; Thalhammer, R. ; Litzenberger, M. ; Seliger, N. ; Pogany, D. ; Gornik, E. ; Wachutka, G.
Author_Institution :
Inst. for Solid State Electron., Tech. Univ. Wien, Austria
Abstract :
We present a differential backside laser probing technique for the investigation of lateral temperature variations in power devices. The method is applied to analyze the temperature evolution in IGBTs operated under short circuit conditions. The extraction of the temperature from optical modulation signals is supported by electro-thermal device simulations, taking into account sample preparation effects
Keywords :
insulated gate bipolar transistors; measurement by laser beam; optical modulation; power bipolar transistors; semiconductor device measurement; semiconductor device models; specimen preparation; temperature distribution; temperature measurement; thermal analysis; IGBTs; differential backside laser probing technique; electro-thermal device simulations; lateral temperature distribution; lateral temperature variation; optical modulation signals; power devices; sample preparation effects; short circuit conditions; temperature evolution; temperature extraction; Circuit simulation; Detectors; Frequency; Laser beams; Metallization; Phase detection; Phase measurement; Pulse measurements; Signal detection; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764095
