Comparison of 10-kV SiC power devices in solid-state transformer

The characteristics and losses of 10-kV SiC MOSFETs, p-IGBTs and emitter turn-off thyristors (ETOs) were compared using the experimental measurements, PSPICE simulations and numerical simulations. Using the extracted loss information and method of loss calculation in the AC/DC rectifier and DC/DC converter, the frequency capability of these 10-kV SiC power devices in a 20 kVA solid-state transformer (SST) was investigated and compared in the same total power loss density of 300 W/cm² and junction temperature of 125°C. The comparison shows that 10-kV SiC MOSFETs have the highest switching frequency capability amongst the discussed 10-kV SiC device types in the AC/DC rectifier stage and DC/DC converter stage of the SST.