Title :
An improved power MOSFET using a novel split well structure
Author :
Zeng, Jun ; Wheatley, C. Frank
Author_Institution :
Semicond. Sector, Harris Corp., Mountaintop, PA, USA
Abstract :
The design trade-offs between the specific on-resistance (Rsp ), the ruggedness and the reverse recovery charge (Qrr) of the body-diode for vertical power MOSFETs has been significantly improved by using a novel split-well (SW) concept. The implementation of the SW structure is straightforward with low cost. It is expected that the source exclusion mask can be removed. When compared to a conventional VDMOST with the same design rules, the SW device provides 15% lower Rsp and 10% lower Qrr without degradation of device ruggedness. In addition, it is expected that the SW device will yield higher hot-carrier reliability
Keywords :
electric charge; electric resistance; hot carriers; masks; power MOSFET; semiconductor device measurement; semiconductor device reliability; SW device; SW structure; VDMOST; body-diode; design rules; design trade-offs; device ruggedness; hot-carrier reliability; power MOSFET; reverse recovery charge; source exclusion mask; specific on-resistance; split well structure; vertical power MOSFETs; Annealing; Avalanche breakdown; Current density; Electric breakdown; Immune system; Implants; Leakage current; MOSFET circuits; Power MOSFET; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764098
