Title :
Lateral dual channel emitter switched thyristor employing segmented p-base
Author :
Byeon, D.S. ; Oh, J.K. ; Han, M.K. ; Choi, Y.-I.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new lateral dual channel emitter switched thyristor employing segmented p-base, entitled the lateral SB-DCEST, is proposed in order to eliminate the snap-back and to decrease the forward voltage drop. The forward I-V characteristics of the fabricated lateral SB-DCEST show that the snap-back problem is almost eliminated and a lower forward voltage drop by 1 V is obtained when compared with the conventional lateral DCEST due to the enhanced thyristor operation
Keywords :
electric current; semiconductor device testing; thyristors; forward I-V characteristics; forward voltage drop; lateral SB-DCEST; lateral dual channel emitter switched thyristor; segmented p-base; snap-back; thyristor operation; Cathodes; Doping; Electrodes; Insulated gate bipolar transistors; Low voltage; Power integrated circuits; Temperature; Threshold voltage; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764100
