Title :
The simulation of the low dose-rate radiation effect in bipolar devices
Author :
Pershenkov, V.S. ; Cherepko, S.V. ; Belyakov, V.V. ; Abramov, V.V. ; Rusanovsky, V.I. ; Sogoyan, A.V. ; Rogov, V.I. ; Ulimov, V.N. ; Emelianov, V.V. ; Nasibullin, V.S.
Author_Institution :
Eng. Phys. Inst., Moscow, Russia
Abstract :
Experimental techniques for bipolar low dose-rate effect investigation and simulation are presented. The techniques utilize the bulk and peripheral recombination current separation and infrared illumination during high dose-rate laboratory test
Keywords :
X-ray effects; bipolar transistors; electron-hole recombination; bipolar device; infrared illumination; low dose rate radiation effect; recombination current; simulation; Bipolar transistors; Current measurement; Degradation; Instruments; Laboratories; Physics; Radiation effects; Temperature; Testing; Time measurement;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698846
