DocumentCode
2793872
Title
The simulation of the low dose-rate radiation effect in bipolar devices
Author
Pershenkov, V.S. ; Cherepko, S.V. ; Belyakov, V.V. ; Abramov, V.V. ; Rusanovsky, V.I. ; Sogoyan, A.V. ; Rogov, V.I. ; Ulimov, V.N. ; Emelianov, V.V. ; Nasibullin, V.S.
Author_Institution
Eng. Phys. Inst., Moscow, Russia
fYear
1997
fDate
15-19 Sep 1997
Firstpage
66
Lastpage
68
Abstract
Experimental techniques for bipolar low dose-rate effect investigation and simulation are presented. The techniques utilize the bulk and peripheral recombination current separation and infrared illumination during high dose-rate laboratory test
Keywords
X-ray effects; bipolar transistors; electron-hole recombination; bipolar device; infrared illumination; low dose rate radiation effect; recombination current; simulation; Bipolar transistors; Current measurement; Degradation; Instruments; Laboratories; Physics; Radiation effects; Temperature; Testing; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698846
Filename
698846
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