Electro-thermal instability in low voltage power MOS: Experimental characterization

Author

Breglio, G. ; Frisina, F. ; Magrì, A. ; Spirito, P.

Author_Institution

Dipt. di Ingegneria Elettronica e della Telecomunicazioni, Naples Univ., Italy

fYear

1999

fDate

1999

Firstpage

233

Lastpage

236

Abstract

In this paper, we present experimental results of dynamic thermal mapping on a new class of low voltage high current power MOSFETs. The reported results underline that, as in the case of power BJTs, the hot-spot phenomenon also occurs in this class of devices. Moreover, we give a theoretical interpretation of this phenomenon and propose a novel approach to understand the causes that can determine the temperature instabilities in such MOS devices

Keywords

electric current; power MOSFET; semiconductor device measurement; temperature distribution; thermal analysis; thermal stability; MOS devices; dynamic thermal mapping; electro-thermal instability; hot-spot phenomenon; low voltage high current power MOSFETs; low voltage power MOS; power BJTs; temperature instability; Low voltage; MOS devices; Microscopy; Optical surface waves; Oscilloscopes; Radiometry; Semiconductor optical amplifiers; Spatial resolution; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764106

Filename

764106