DocumentCode
2793894
Title
Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits
Author
Dilhac, J.-M. ; Cornibert, L. ; Morillon, B. ; Roux, S. ; Ganibal, C.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fYear
1999
fDate
1999
Firstpage
237
Lastpage
240
Abstract
An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered
Keywords
integrated circuit manufacture; integrated circuit technology; power integrated circuits; rapid thermal processing; surface chemistry; zone melting; AlSi; deep junctions; manufacturing environment; molten Al/Si; power devices; power integrated circuits; rapid thermal processing; surface consumption; temperature gradient zone melting; thermomigration; total vertical junction insulation; voltage handling capability; Annealing; Cooling; Furnaces; Heat sinks; Lamps; Rapid thermal processing; Silicon carbide; Temperature control; Thermal conductivity; Water heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764107
Filename
764107
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