• DocumentCode
    2793894
  • Title

    Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits

  • Author

    Dilhac, J.-M. ; Cornibert, L. ; Morillon, B. ; Roux, S. ; Ganibal, C.

  • Author_Institution
    Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered
  • Keywords
    integrated circuit manufacture; integrated circuit technology; power integrated circuits; rapid thermal processing; surface chemistry; zone melting; AlSi; deep junctions; manufacturing environment; molten Al/Si; power devices; power integrated circuits; rapid thermal processing; surface consumption; temperature gradient zone melting; thermomigration; total vertical junction insulation; voltage handling capability; Annealing; Cooling; Furnaces; Heat sinks; Lamps; Rapid thermal processing; Silicon carbide; Temperature control; Thermal conductivity; Water heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764107
  • Filename
    764107